ALEXANDRIA, Va., July 14 -- United States Patent no. 12,684,772, issued on July 14, was assigned to SK hynix Inc. (Gyeonggi-do, South Korea). "Semiconductor device and method of manufacturing the sam... और पढ़ें
ALEXANDRIA, Va., July 14 -- United States Patent no. 12,684,773, issued on July 14, was assigned to YANGTZE MEMORY TECHNOLOGIES Co. LTD. (Wuhan, China). "Three-dimensional memory devices having isola... और पढ़ें
ALEXANDRIA, Va., July 14 -- United States Patent no. 12,684,774, issued on July 14, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea). "Semiconductor memory device having blocking ... और पढ़ें
ALEXANDRIA, Va., July 14 -- United States Patent no. 12,684,775, issued on July 14, was assigned to SK hynix Inc. (Icheon-si, South Korea). "Semiconductor memory device and manufacturing method of th... और पढ़ें
ALEXANDRIA, Va., July 14 -- United States Patent no. 12,684,776, issued on July 14, was assigned to MACRONIX International Co. Ltd. (Hsinchu, Taiwan). "Memory device" was invented by Yuan-Chieh Chiu ... और पढ़ें
ALEXANDRIA, Va., July 14 -- United States Patent no. 12,684,777, issued on July 14, was assigned to Sandisk Technologies Inc. (Milpitas, Calif.). "Three-dimensional memory device containing phosphoru... और पढ़ें
ALEXANDRIA, Va., July 14 -- United States Patent no. 12,684,778, issued on July 14, was assigned to Monolithic 3D Inc. (Allen, Texas). "3D memory semiconductor devices and structures with memory cell... और पढ़ें
ALEXANDRIA, Va., July 14 -- United States Patent no. 12,684,779, issued on July 14, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Gyeonggi-do, South Korea). "Semiconductor memory device, method for f... और पढ़ें
ALEXANDRIA, Va., July 14 -- United States Patent no. 12,684,780, issued on July 14, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-Si, South Korea). "Memory device having hydrogen-ion bypass via... और पढ़ें
ALEXANDRIA, Va., July 14 -- United States Patent no. 12,684,781, issued on July 14, was assigned to GlobalFoundries U.S. Inc. (Malta, N.Y.). "Ferroelectric memory device with multi-level bit cell" wa... और पढ़ें